2sK3397 2006-11-16 1 toshiba field effect transistor silicon n chann el mos type (u-mos ii) 2sK3397 relay drive and dc-dc converter applications motor drive applications z low drain-source on resistance: r ds (on) = 4.0 m ? (typ.) z high forward transfer admittance: |y fs | = 110 s (typ.) z low leakage current: i dss = 10 a (max) (v ds = 30 v) z enhancement mode: v th = 1.5 to 3.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 70 drain current pulse (note 1) i dp 210 a drain power dissipation (tc = 25c) p d 125 w single pulse avalanche energy (note 2) e as 273 mj avalanche current i ar 70 a repetitive avalanche energy (note 3) e ar 12.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.0 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 25 v, t ch = 25c (initial), l = 40 h, i ar = 70 a, r g = 25 note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sens itive device. please handle with caution. unit: mm jedec D jeita sc-97 toshiba 2-9f1b weight: 0.74 g (typ.) circuit configuration 1 3 4
2sK3397 2006-11-16 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.5 ? 3.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 35 a ? 4.0 6.0 m forward transfer admittance ? y fs ? v ds = 10 v, i d = 35 a 55 110 ? s input capacitance c iss ? 5000 ? reverse transfer capacitance c rss ? 550 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 1000 ? pf rise time t r ? 8.0 ? turn-on time t on ? 25 ? fall time t f ? 48 ? switching time turn-off time t off ? 180 ? ns total gate charge (gate-source plus gate-drain) q g ? 110 ? gate-source charge q gs ? 87 ? gate-drain (?miller?) charge q gd v dd ? 24 v, v gs = 10 v, i d = 70 a ? 23 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 70 a pulse drain reverse current (note 1) i drp ? ? ? 210 a forward voltage (diode) v dsf i dr = 70 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 40 ? ns reverse recovery charge q rr i dr = 70 a, v gs = 0 v, di dr /dt = 30 a/ s ? 40 ? nc marking duty < = 1%, t w = 10 s 0 v 10 v v gs r l = 0.43 v dd ? 15 v i d = 35 a v out 4.7 K3397 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
2sK3397 2006-11-16 3 i d ? v ds i d ? v ds i d ? v gs v ds ? v gs |y fs | ? i d r ds (on) ? i d 23 4 5 0 40 60 80 100 20 01 4 6 8 10 0 0.4 0.6 0.8 1.0 0.2 02 10 100 1 10 110100 1 10 0 20 40 60 80 100 0.4 0.6 0.8 1.0 0 0.2 2 4 0 40 60 80 100 20 0 1 100 5 100 3 1 6 120 12 1.2 1000 1000 forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) v gs = 3v 3.25 3.5 3.75 4 8 10 6 4.5 5 common source tc = 25c pulse test v gs = 3 v 3.25 3.5 3.75 5 10 4.5 4 8 6 common source tc = 25c pulse test tc = ? 55c 100 25 common source v ds = 10 v pulse test i d = 70 a 15 35 common source tc = 25 pulse test tc = ? 55c 25 100 common source v ds = 10 v pulse test v gs = 10,15v common source tc = 25c pulse test
2sK3397 2006-11-16 4 v th ? tc 0 ? 80 0 40 80 120 160 ? 40 1 2 r ds (on) ? tc 0 20 4 12 8 ? 40 ? 80 160 0 40 120 80 i dr ? v ds p d ? tc 200 50 100 150 0 0 80 40 160 120 40 0 30 20 10 0 80 120 40 10 5 20 0 15 16 100 1000 0.1 100 10000 1 10 3 4 160 200 ? 0.4 0 ? 0.8 ? 1.2 ? 1.6 1 10 1000 100 i d = 15,35a 70 common source v gs = 10 v pulse test ? 2.0 common source tc = 25c pulse test v gs = 0, ? 1 v 1 10 5 3 common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss 5 200 50 25 v dd = 24v 12 6 v ds v gs common source i d = 70 a tc = 25c pulse test ambient temperature ta (c) gate threshold voltage v th (v) ambient temperature ta (c) total gate charge q g (nc) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on resistance r ds (on) (m ) ambient temperature ta (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source v ds = 10 v i d = 1ma pulse test
2sK3397 2006-11-16 5 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 10 100 1m 10m 100m 0.01 0.1 1 10 10 single pulse t p dm t duty = t/t r th (ch-c) = 1.0c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 1 safe operating area drain-source voltage v ds (v) 0. 1 1 10 drain current i d (a) 1 10 1000 0. 1 100 100 single pulse ta =25 curves must be derated linearly with increase in temperature. i d max (pulse) * i d max (continuous) dc opeation tc = 25c 100 s * 1 ms * v dss max channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) ?15 v 15 v test circuit wave form i ar b vdss v dd v ds r g =25 v dd = 25 v, l = 40 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as 400 300 200 100 0 25 50 75 100 125 150 500
2sK3397 2006-11-16 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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